|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT-82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (tp 10ms, 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain IEBO hFE Test Conditions IE = 0, VCBO = 120V IE = 0, VCBO = 120V, TJ = +150C IB = 0, VCEO = 60V IC = 0, VEBO = 5V IC = 500mA, VCEO = 3V, Note 1 IC = 3A, VCEO = 3V, Note 1 IC = 6A, VCEO = 3V, Note 1 Min - - - - - 750 - Typ - - - - 2700 - 400 Max 0.2 2mA 0.5 5 - - - Unit mA mA mA mA Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified) Parameter Base-Emitter Voltage Collector-Emitter Saturation Voltage Small-Signal Current Gain Cut-Off Frequency Diode, Forward Voltage Second Breakdown Collector Current Non-Repetitive, without Heatsink Turn-On Time Turn-Off Time Symbol VBE VCE(sat) hfe fhfe VF I(SB) ton toff Test Conditions IC = 3A, VCEO = 3V, Note 2 IC = 3A, IB = 12mA IC = 3A, VCEO = 3V, f = 1MHz IC = 3A, VCEO = 3V IF = 3A VCEO = 60V, tp = 25ms IC(on) = 3A, IB(on) = IB(off) = 12mA IC(on) = 3A, IB(on) = IB(off) = 12mA Min 2.5 2.0 10 - - 1 - - Typ - - - 100 1.8 - 1 5 Max - - - - - - 2 10 kHz V A s s Unit V V Note 2. VBE decreases by about 3.8mV/K with increasing temperature. Schematic Diagram C B B C E NPN .307 (7.8) Max .100 (2.54) PNP E See Note .118 (3.0) Min .147 (3.75) .437 (11.1) Max B C E .100 (2.54) .602 (15.3) Min .090 (2.29) .047 (1.2) Note: Collector connected to metal part of mounting surface. |
Price & Availability of NTE2346 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |